tm ?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet january 2009 FDP8440 n-channel powertrench ? mosfet 40v, 277a, 2.2m features ?r ds(on) = 1.64m ( typ.)@ v gs = 10v, i d = 80a ?q g(tot) = 345nc (typ.)@ v gs = 10v ? low miller charge ?low q rr body diode ? uis capability (single pulse and repetitive pulse) ?rohs compliant application ? automotive engine control ? powertrain management ? motors, solenoids ? electronic steering ? integrated starter/ alternator ? distributed power architectures and vrms ? primary switch for 12v systems mosfet maximum ratings thermal characteristics to-220 fdp series g d s d g s symbol parameter ratings units v dss drain to source voltage 40 v v gss gate to source voltage 20 v i d d r a i n c u r r e n t - continuous (t c = 25 o c, silicon limited) - continuous (t c = 100 o c, silicon limited) - continuous (t c = 25 o c, package limited) 277* 196* 100 a i dm drain current - pulsed (note 1) 500 a e as single pulsed avalanche energy (note 2) 1682 mj p d power dissipation (t c = 25 o c) 306 w - derate above 25 o c2.04w/ o c t j, t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c r jc thermal resistance, junction to case 0.49 o c/w r cs thermal resistance, case to sink (typ.) 0.5 o c/w r ja thermal resistance, junction to ambient 62.5 o c/w t c = 25 o c unless otherwise noted *calculated continuous current based on maximum allowable junction temperature. package limitation current is 100a.
2 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1: pulse width limited by maximum junction temperature. 2: starting t j = 25 c, l = 1mh, i as = 58a, v dd = 36v, v gs = 10v. device marking device package reel size tape width quantity FDP8440 FDP8440 to-220 n/a n/a 50units symbol parameter conditions min typ max units off characteristics bv dss drain to source breakdown voltage v gs = 0v, i d = 250 a40----v i dss zero gate voltage drain current v ds = 32v v gs = 0 v -- -- 1 a t c = 150 o c -- -- 250 a i gss gate to body leakage current v gs = 20v -- -- 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a1--3v r ds(on) static drain-source on-resistance v gs = 4.5v, i d = 80a -- 1.88 2.4 m v gs = 10v, i d = 80a -- 1.64 2.2 v gs = 10v, i d = 80a, t c = 175 o c -- 3.00 4.4 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 18600 24740 pf c oss output capacitance -- 1840 2450 pf c rss reverse transfer capacitance -- 1400 2100 pf r g gate resistance v gs = 0.5v, f = 1mhz -- 1.1 -- q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 20v i d = 80a i g = 1.0ma -- 345 450 nc q g(2) threshold gate charge v gs = 0v to 2v -- 32.5 -- nc q gs gate to source gate charge -- 49 -- nc q gs2 gate charge threshold to plateau -- 16.5 -- nc q gd gate to drain ?miller? charge -- 74 -- nc switching characteristics (v gs = 10v) t on turn-on time v dd = 20v,i d = 80a v gs = 10v, r gen = 7 -- 175 360 ns t d(on) turn-on delay time -- 43 95 ns t r rise time -- 130 275 ns t d(off) turn-off delay time -- 435 875 ns t f fall time -- 290 590 ns t off turn-off time -- 730 1470 ns drain-source diode characteristics and maximum ratings v sd source to drain diode voltage i sd = 80a -- -- 1.25 v i sd = 40a -- -- 1.0 v t rr reverse recovery time i sd = 75a, di sd /dt = 100a/ s--59--ns q rr reverse recovery charge i sd = 75a, di sd /dt = 100a/ s--77--nc
3 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 0246 1 10 100 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 400 0.1 1 1 10 100 0.4 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs = 10.0 v 7.0 v 5.0 v 3.5 v 3.0 v 2.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.04 400 0.3 0.6 0.9 1.2 1 10 100 1000 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c notes: 1. v gs = 0v 2. 250 s pulse test 0 50 100 150 200 250 1.68 1.72 1.76 1.80 * note : t j = 25 o c v gs = 4.5v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 6000 12000 18000 24000 30000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 20 0 100 200 300 400 0 2 4 6 8 10 * note : i d = 80a v ds = 25v v ds = 20v v ds = 15v v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.49 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 * notes : 1. v gs = 10v 2. i d = 80a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] figure 10. safe operating area figure 11. transient thermal response curve t 1 p dm t 2 0.01 0.1 1 10 100 1000 10000 1 10 100 t j = 25 o c t j = 150 o c t av , time in avalanche(ms) i as , avalanche current(a) 200 110 0.1 1 10 100 1000 3000 10ms 100 s 1ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse
5 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet mechanical dimensions to-220
8 www.fairchildsemi.com FDP8440 rev. a6 FDP8440 n-channel powertrench ? mosfet rev. i37 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life s upport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? 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